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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
10
2
Top :
V GS
15.0 V
2
10.0 V
8.0 V
7.0 V
6.5 V
10
10
1
6.0 V
Bottom : 5.5 V
1
150 ? C
25 ? C
-55 ? C
10
10
0
Notes :
1. 250 ? s Pulse Test
2. T C = 25 ? C
0
Note
1. V DS = 40V
2. 250 ? s Pulse Test
10
10
10
-1
0 1
V DS , Drain-Source Voltage [V]
2
4 6 8
V GS , Gate-Source Voltage [V]
10
10
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.4
0.3
V GS = 10V
0.2
V GS = 20V
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
2
1
10
0.1
0
150 ? C
25 ? C
Notes :
1. V GS = 0V
Note : T J = 25 ? C
2. 250 ? s Pulse Test
0.0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I D , Drain Current [A]
Figure 5. Capacitance Characteristics
V SD , Source-Drain Voltage [V]
Figure 6. Gate Charge Characteristics
10000
9000
8000
7000
6000
5000
C oss
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
Notes :
12
10
8
6
V DS = 100V
V DS = 250V
V DS = 400V
4000
3000
2000
1000
C iss
C rss
1. V GS = 0 V
2. f = 1 MHz
4
2
Note : I D = 20A
10
10
10
0
-1
0
1
0
0
10
20
30
40
50
60
70
80
V DS , Drain-Source Voltage [V]
Q G , Total Gate Charge [nC]
?2005 Fairchild Semiconductor Corporation
FCB20N60 Rev. C1
3
www.fairchildsemi.com
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